A Surface Potential-Based Gate-Leakage Current Model for Organic Thin-Film Transistors

PROJECT TITLE :

A Surface Potential-Based Gate-Leakage Current Model for Organic Thin-Film Transistors

ABSTRACT:

In this paper, a surface potential-based mostly gate-leakage current (GLC) model for organic skinny-film transistors is proposed. It is found that the Poole–Frenkel emission is the main mechanism of GLC, which will be well described by our model for each accumulation and depletion modes. As well, the source and drain partitions of the channel leakage current can be well explained primarily based on our model. Furthermore, the dependence of GLC on drain voltage, temperature, and material disorder has been mentioned well, that yields perfect agreement with the experimental information.

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