Electrical Characterization of Flexible InGaZnO Transistors and 8-b Transponder Chip Down to a Bending Radius of 2 mm

PROJECT TITLE :

Electrical Characterization of Flexible InGaZnO Transistors and 8-b Transponder Chip Down to a Bending Radius of 2 mm

ABSTRACT:

During this paper, we have a tendency to present the fabrication and characterization of highly flexible indium-gallium–zinc-oxide (IGZO)-based thin-film transistors (TFTs) and integrated circuits on a clear and thin polymer substrate. Mechanical reliability tests are performed under bending conditions right down to a bending radius of 2 mm. All the TFT parameters show only a weak dependence on mechanical strain. TFTs can withstand bending strain up to 0.75% while not any vital amendment in the device operation. Mechanical reliability is more demonstrated to the next TFT integration level by ring oscillators and 8-b transponder chips operating at a bending radius of 2 mm.

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