Monolithic Integration of an Active InSb-Based Mid-Infrared Photopixel With a GaAs MESFET

PROJECT TITLE :

Monolithic Integration of an Active InSb-Based Mid-Infrared Photopixel With a GaAs MESFET

ABSTRACT:

Medium wavelength infrared (MWIR) detectors are of accelerating importance in defense, security, business, and environmental applications. Enhanced integration can result in bigger resolution and lower value focal plane arrays (FPAs). We tend to gift the monolithic fabrication of an active photopixel made in InSb on a GaAs substrate that is suitable for massive-scale integration into an FPA. Pixel addressing is provided by the cointegration of a GaAs MESFET with an InSb photodiode (PD). Pixel fabrication was achieved by developing novel materials and process steps, including isolation etches, a gate recess etch, and low temperature processes, to create Ohmic contacts to both the GaAs and InSb devices. Detailed electrical and optical measurements in an FTIR demonstrated that the PD was sensitive to radiation within the vary of 3– at space temperature, and that the device could be isolated from its contacts using the integrated MESFET. This heterogeneous technology creates nice potential to appreciate a brand new sort of monolithic FPA of addressable pixels for imaging within the MWIR vary.

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